BYX55 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BYX55 Datasheet PDF : 3 Pages
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RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC134)
Voltages*
BYX56-600IR) 800 (R) 10001R) 12001R) 1400(R)
Crest working reverse voltage VRWM mmaaxx. 600 800
Continuous reverse voltage VR
max. 600 800
1000
1000
1200
1200
1400 V
1400 V
Currents
Average forward current
(averaged over any 20 ms period)
uptoTmb=112°C
atTmb=125°C
R.M.S. forward current
Repetitive peak forward current
Non-repetitive peak forward current
t = 10 ms (half sine-wave);
TJ = 175 °C prior to surge;
with reapplied VRWMmax
lat for fusing (t < 10 ms)
Reverse power dissipation
Repetitive peak reverse power dissipation
t = 10 AIS (square-wave; f = 50 Hz);
TJ= 175 °C
Non-repetitive peak reverse power dissipation
t = 10 MS (square-wave)
TJ = 25 °C prior to surge
TJ = 175 °C prior to surge
Temperatures
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to mounting base
From mounting base to heatsink
Transient thermal impedance; t= 1 ms
'F(AV)
'F(AV)
'FIRMS)
'FRM
max.
max.
max.
max.
48 A
40 A
75 A
450 A
'FSM
max.
ijt
max.
800 A
3200 A's
PRRM
max.
6.5 kW
PRSM
PRSM
max.
max.
40 kW
6.5 kW
Tstg
Tj
-55 to +175 OC
max.
175 °C
Rth j-mb
Rth mb-h
zth j-h
0.8 oc/w
0.2 °C/W
0.03 OQ/W
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