DS2103SY22 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DS2103SY22

Rectifier Diode

Dynex Semiconductor 

DS2103SY

100000

10000

IF

QS

dIF/dt

IRM

Max. Irr

1000

Conditions:

Tj = 175˚C

VR = 100V

IF = 2000A

100

Max. QS

140

120

100

80

I2t

60

I2t = Î2 x t

2

25

20

15

10

40

5

1000

0.1

10

1.0

10

100

Rate of decay of forward current, dI/dt - (A/µs)

Fig.4 Total stored charge and maximum reverse

recovery current

0.1

20

0

1

10 1 2 3 5 10 20 50

ms

Cycles at 50Hz

Duration

Fig.5 Surge (non-repetitive) forward current vs time

(with 50% VRRM at Tcase 175˚C)

Anode side cooled

0.01

Double side cooled

0.001

0.0001

0.001

0.01

Conduction Effective thermal resistance

Junction to case ˚C/W

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Double side

0.0095

0.0105

0.0112

0.0139

Single side

0.019

0.020

0.0207

0.0234

0.1

1

Time - (s)

10

100

Fig.6 Maximum (limit) transient thermal impedance -

junction to case

5/7

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