DS2103SY25 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DS2103SY25

Rectifier Diode

Dynex Semiconductor 

DS2103SY

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRM

Peak reverse current

QS

Total stored charge

Irr

Peak reverse recovery current

V

Threshold voltage

TO

r

Slope resistance

T

Conditions

At 3000A peak, Tcase = 25oC

At VRRM, Tcase = 175oC

IF = 2000A, dIRR/dt = 3A/µs

T = 175˚C, V = 100V

case

R

At T = 175˚C

vj

At T = 175˚C

vj

Min. Max. Units

-

1.05

V

-

150 mA

- 3000 µC

-

125

A

-

0.75

V

- 0.063 mΩ

CURVES

10000

Measured under pulse conditions

Tj = 175˚C

8000

12000

10000

6000

4000

8000

6000

4000

2000

2000

0

0

0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

0

Instantaneous forward voltage, VF - (V)

Fig.2 Maximum (limit) forward characteristics

dc

Half wave

3 phase

6 phase

2000

4000

6000

8000

Mean forward current, IF(AV) - (A)

Fig.3 Dissipation curves

10000

VFM Equation:-

VFM = A + Bln (IF) + C.IF+D.√IF

Where

A = –0.51826

B = 0.195881

C = 6.39 x 10–5

D = –0.00544

these values are valid for Tj = 125˚C for IF 500A to 9000A

4/7

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