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DF005S Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza
componentes Descripción
Fabricante
DF005S Datasheet PDF : 5 Pages
1 2 3 4 5
DF005S DF10S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
DF
005S
DF
01S
DF
02S
DF
04S
DF
06S
DF
08S
DF
10S
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRMM
VRWM
50
100 200 400 600 800 1000
V
VR
VRMS
35
70
140 280 420 560 700
V
Average Forward Rectified Current
@ TA = +40°C IO
1.0
A
Non-Repetitive Peak Forward Surge Current, 8.3 ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
50
A
Thermal Characteristics
Characteristic
Symbol
DF
005S
DF
01S
DF
02S
DF
04S
DF
06S
DF
08S
DF
10S
Unit
Typical Thermal Resistance, Junction to Ambient (Note 6)
RΘJA
40
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
DF
005S
DF
01S
DF
02S
DF
04S
DF
06S
DF
08S
DF
10S
Unit
Forward Voltage (Per Element)
@ IF = 1.0A
VFM
1.1
V
Peak Reverse Current at Rated
DC Blocking Voltage (Per Element)
@ TA = +25°C
@ TA = +125°C
IRM
10
500
µA
I2t Rating for Fusing (t<8.3ms)
I2t
10.4
A2s
Typical Total Capacitance (Per Element) (Note 5)
CT
25
pF
Notes:
5. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
6. Thermal resistance, junction to ambient, measured on PC board with 5.0mm2 (0.03mm thick) land areas.
DF005S DF10S
Document number: DS17001 Rev. 17 - 2
2 of 5
www.diodes.com
November 2016
© Diodes Incorporated

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