IXGR35N120BD1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGR35N120BD1 Datasheet PDF : 2 Pages
| |||
IXGR 35N120BD1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
IC = 35A; VCE = 10 V,
Note 2.
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
28 38
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
2300
pF
190
pF
80
pF
IC = 40A, VGE = 15 V, VCE = 0.5 VCES
140
nC
20
nC
50
nC
Inductive load, TJ = 25°C
IC = 35 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 3 Ω
Note 1.
40
ns
50
ns
0.9
mJ
270 500 ns
160 300 ns
3.8 7.0 mJ
Inductive load, TJ = 125°C
IC = 35A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 3 Ω
Note 1
45
ns
60
ns
1.9
mJ
380
ns
400
ns
8.0
mJ
0.25
0.5 K/W
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
trr
RthJC
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V, TJ = 125°C
IF = 10 A; -diF/dt = 100 A/µs, VR = 100 V
VGE = 0 V; TJ = 125°C
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
3.3 V
2.2 V
4.0
A
190
ns
40
ns
2.5 K/W
Notes:
1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG.
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.
ISOPLUS247 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
Share Link: 