IRFD320 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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IRFD320 Datasheet PDF : 7 Pages
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IRFD320
Typical Performance Curves Unless Otherwise Specified (Continued)
5
VGS = 6.0V
4
VGS = 5.5V
3 VGS = 10V
2
1
VGS = 5.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 4.5V
VGS = 4.0V
0
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
6 2µs PULSE TEST
DUTY CYCLE = 0.5% MAX
5
4
3
VGS = 10V
VGS = 20V
2
1
0
0
2
4
6
8
10
12
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
5
4
3
TJ = 125oC
2
TJ = 25oC
TJ = -55oC
1
0
0
1
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
2.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.8 VGS = 10V, ID = 0.25A
1.4
1.0
0.6
0.2
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
600
CISS
400
200
COSS
CRSS
00
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
IRFD320 Rev. A
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