BB814 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BB814

Silicon Variable Capacitance Diode

Siemens AG 

BB 814

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

DC Characteristics

Reverse current

IR

VR = 16 V

VR = 16 V, TA = 60 ˚C

Diode capacitance

CT

f = 1 MHz1)

VR = 2 V

VR = 8 V

Capacitance ratio

CT2

VR = 2 V, 8 V, f = 1 MHz

CT8

Capacitance matching

∆CT

VR = 2 V, 8 V

CT

Series resistance

rS

VR = 2 V, f = 100 MHz

Q factor

Q

VR = 2 V, f = 100 MHz

1) Capacitance groups, coded 1, 2

Code

1

2

CT (2 V)

43 … 45

44.5 … 46.5

CT (8 V)

Unit

19.1 … 21.95 pF

19.75 … 22.7 pF

min.

Values

Unit

typ.

max.

nA

–

–

20

–

–

200

pF

43

44.75 46.5

19.1

20.8

22.7

2.05

2.15

2.25

–

–

–

3

%

–

0.18

–

Ω

–

200

–

–

Semiconductor Group

2

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