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LC75810E

1/8 to 1/10 Duty Dot Matrix LCD Display Controllers/Drivers

ON Semiconductor 

LC75810E/T

IM1 and IM2: Sets the method of writing data to DCRAM

IM1 IM2

DCRAM data write method

0

0 Normal DCRAM data write (Specifies the DCRAM address and writes the DCRAM data.)

1

0 Normal increment mode DCRAM data write (Increments the DCRAM address by +1 each time data is written to DCRAM.)

0

1 Super-increment mode DCRAM data write (Writes 2 to 16 characters of DCRAM data in a single operation.)

∗21 • DCRAM data write method when IM1 is 0 and IM2 is 0.

CE

CCB address

CCB address

CCB address

CCB address

DI

DCRAM

(1)

24 bits

(1)

24 bits

(1)

24 bits

(1)

24 bits

Instruction

execution

time (27 µs)

Instruction

execution

time (27 µs)

DCRAM data

write finishes

Instruction

execution

time (27 µs)

DCRAM data

write finishes

DCRAM data

write finishes

Instruction

execution

time (27 µs)

DCRAM data

write finishes

• DCRAM data write method when IM1 is 1 and IM2 is 0.

(Instructions other than the “DCRAM data write” instruction cannot be executed.)

CE

CCB address

DI

DCRAM

CCB address

CCB address

(2)

(3)

(3)

24 bits

8 bits

8 bits

CCB address

CCB address

CCB address

(3)

(3)

8 bits

8 bits

(4)

16 bits

Instruction

execution

time (27 µs)

Instruction

execution

time (27 µs)

Instruction

execution

time (27 µs)

Instruction

execution

time (27 µs)

Instruction

execution

time (27 µs)

Instruction

execution

time (27 µs)

DCRAM data

write finishes

DCRAM data

write finishes

DCRAM data

write finishes

DCRAM data

write finishes

DCRAM data

write finishes

(Instructions other than the “DCRAM data write” instruction cannot be executed.)

• DCRAM data write method when IM1 is 0 and IM2 is 1.

DCRAM data

write finishes

CE

CCB address

DI

(5)

n bit

DCRAM

CCB address

(5)

n bit

CCB address

(5)

n bit

Instruction

execution

time (ti μs)

DCRAM data

write finishes

Instruction

execution

time (ti μs)

DCRAM data

write finishes

Instruction

execution

time (ti μs)

DCRAM data

write finishes

ti = 13.5μs × ( n -1) (n = 8m + 16, m is an integer between 2 and 16 that is the number of characters written as DCRAM

8

data.)

For example

When n = 32 bits (m = 2): ti = 40.5 μs (when fosc = 300 kHz)

When n = 80 bits (m = 8): ti = 121.5 μs (when fosc = 300 kHz)

When n = 144 bits (m = 16): ti = 229.5 μs (when fosc = 300 kHz)

Note that the instruction execution time of 27 μs and ti values in µs apply when fosc = 300 kHz, and that these times will

differ when the oscillator frequency fosc differs.

No.7141-21/54

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