HSM198S Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HSM198S

Silicon Schottky Barrier Diode for Various Detector

Renesas Electronics 

HSM198S

Absolute Maximum Ratings

Item

Reverse voltage

Average forward current

Junction temperature

Storage temperature

Note: 1. Two device total

VR

IO *1

Tj

Tstg

Symbol

Value

10

30

125

−55 to +125

(Ta = 25°C)

Unit

V

mA

°C

°C

Electrical Characteristics *1

Item

Symbol Min

Typ

Forward voltage

VF

—

—

Forward current

IF

4.5

—

Reverse current

IR

—

—

Capacitance

C

—

—

Capacitance deviation ∆VF

ESD Capability *2

—

—

—

30

—

Notes: 1. Per one device

2. Failure Criterrion; IR > 140 µA at VR = 6 V

(Ta = 25°C)

Max

Unit

Test Condition

1.1

V

IF = 5 mA

—

mA VF = 1 V

70

µA VR = 6 V

1.5

pF VR = 1 V, f = 1 MHz

10

mV IF = 5 mA

—

V

C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse

Rev.4.00 Apr 25, 2005 page 2 of 4

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