MDI200-12A4 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

MDI200-12A4

IGBT Modules

IXYS CORPORATION 

MII 200-12 A4 MID 200-12 A4

MDI 200-12 A4

Symbol

V(BR)CES

VGE(th)

ICES

IGES

VCE(sat)

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eon

Eoff

RthJC

RthJS

Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VGE = 0 V

IC = 6 mA, VCE = VGE

VCE = VCES

VCE = 0 V, VGE = ±20 V

IC = 150 A, VGE = 15 V

TJ = 25°C

TJ = 125°C

VCE = 25 V, VGE = 0 V, f = 1 MHz

Inductive load, TJ = 125°C

IC = 150 A, VGE = ±15 V

VCE = 600 V, RG = 6.8 W

with heatsink compound

1200

4.5

V

6.5 V

10 mA

15

mA

±700 nA

2.2 2.7 V

11

nF

1.5

nF

0.65

nF

100

ns

50

ns

650

ns

50

ns

24.2

mJ

21

mJ

0.11 K/W

0.22

K/W

Dimensions in mm (1 mm = 0.0394")

Reverse Diode (FRED)

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VF

IF

IRM

trr

RthJC

RthJS

IF = 150 A, VGE = 0 V,

IF = 150 A, VGE = 0 V, TJ = 125°C

TC = 25°C

TC = 80°C

IF = 150 A, VGE = 0 V, -diF/dt = 1200 A/ms

TJ = 125°C, VR = 600 V

with heatsink compound

2.2 2.5 V

1.8 1.9 V

300 A

200 A

125

A

200

ns

0.23 K/W

0.45

K/W

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.5 V; R0 = 7.0 mW

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 3.4 mW

Thermal Response

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IGBT (typ.)

Cth1 = 0.40 J/K; Rth1 = 0.110 K/W

Cth2 = 0.93 J/K; Rth2 = 0.003 K/W

Free Wheeling Diode (typ.)

Cth1 = 0.28 J/K; Rth1 = 0.226 K/W

Cth2 = 0.51 J/K; Rth2 = 0.005 K/W

2-4

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