2N5322(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N5322 Datasheet PDF : 3 Pages
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PNP 2N5322 – 2N5323
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
Collector Cutoff Current
VCB = -80 V, IE =0 2N5322 -
VCB = -60 V, IE =0 2N5323 -
-
-
-0.5
-5
µA
IEBO
Emitter Cutoff Current
VEB = -5 V, IC =0 2N5322 - -0.1 -
VEB = -4 V, IC =0 2N5323 - -0.5 -
µA
VCEO
Collector Emitter
Breakdown Voltage
IC = -10 mA, IB =0
2N5322
2N5323
-75
-50
-
-
-
-
V
VCEV
Collector Emitter
Breakdown Voltage
IC = -100 µA
VBE = 1.5V
2N5322 -100 -
2N5323 -75 -
-
-
V
VEBO
Emitter Base Breakdown
Voltage
IE = -100 µA
IC =0
2N5322 -6
-
2N5323 -5
-
-
-
V
hFE (1) DC Current Gain
IC = -500 mA
VCE = -4 V
IC = -1 A
VCE = -2 V
2N5322 30
2N5323 40
2N5322 10
- 130
- 250 -
-
-
VCE(SAT)
(1)
Collector-Emitter saturation IC = -500 mA
Voltage
IB = -50 mA
2N5322 -
2N5323 -
-
-
-0.7
-1.2
V
VBE (1) Base-Emitter Voltage
IC = -500 mA
VCE = -4 V
2N5322 -
2N5323 -
-
-
-1.1
-1.4
V
IC = -50 mA
2N5322
fT
Transition frequency
VCE = -4 V
f = 10 MHz
50 -
2N5323
- MHz
ton
Turn-on Time
IC = -500 mA
VCC = -30 V
IB1 = -50 mA
2N5322
-
2N5323
- 100 ns
toff
Turn-off Time
IC = 500 mA
2N5322
VCC = 30 V
-
IB1 = -IB2 = -50 mA 2N5323
- 1000 ns
(1) Pulse conditions : tp < 300 µs, δ =1%
17/10/2012
COMSET SEMICONDUCTORS
2/3
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