2N5320(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N5320 Datasheet PDF : 3 Pages
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NPN 2N5320 – 2N5321
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
IEBO
VCEO
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
VCB = 80 V, IE =0
VCB = 60 V, IE =0
VEB = 5 V, IC =0
VEB = 4 V, IC =0
IC = 10 mA, IB =0
VCEV
Collector Emitter
Breakdown Voltage
IC = 100 µA
VBE = 1.5V
VEBO
Emitter Base Breakdown
Voltage
IE = 100 µA, IC =0
hFE (*) DC Current Gain
VCE(SAT)
(*)
Collector-Emitter
saturation Voltage
IC = 500 mA
VCE = 4 V
IC = 1 A
VCE = 2 V
IC = 500 mA
IB = 50 mA
VBE (*)
fT
Base-Emitter Voltage
Transition frequency
IC = 500 mA
VCE = 4 V
IC = 50 mA
VCE = 4 V
f = 10 MHz
IC = 500 mA
ton
Turn-on Time
VCC = 30 V
IB1 = 50 mA
IC = 500 mA
toff
Turn-off Time
VCC = 30 V
IB1 = -IB2 = 50 mA
(*) Pulse conditions : tp < 300 µs, δ =1%
2N5320 -
2N5321 -
-
-
0.5
5
µA
2N5320 -
2N5321 -
0.1
0.5
-
-
µA
2N5320 75 -
2N5321 50 -
-
-
V
2N5320 100 -
2N5321 75 -
-
-
V
2N5320 6
2N5321 5
-
-
-
-
V
2N5320 30 - 130
2N5321 40
- 250 -
2N5320 10 -
-
2N5320 -
2N5321 -
2N5320 -
2N5321 -
-
-
0.5
0.8
V
-
-
1.1
1.4
V
2N5320
50 -
2N5321
- MHz
2N5320
-
2N5321
2N5320
-
2N5321
- 80 ns
- 800 ns
COMSET SEMICONDUCTORS
2/3
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