2N2894 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
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2N2894 Datasheet PDF : 2 Pages
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THERMAL DATA
Rth j-cas9 Thermal Resistance Junction-case
Rth |-amb Thermal Resistance Junction-ambient
Max
146
°C/W
Max
486
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 <C unless otherwise specified)
Symbol
Parameter
Test Conditions
Win. Typ.
ICBO
Collector Cutoff Current
(IE=0) (for 2N2894 only)
VCB-- 6V
Tainb~125°C
ICES Collector Cutoff Current
<VBE=O)
for 2N28 94
VOE--SV
for2N3209
VCE =- 10V
VCE=~10V
Tamb-1250C
V{BR) CBO Colllector-base Breakdown l c - - 1 0 u A
Voltage (IE = 0)
for2N2894
-12
for2N3209
-20
V(BH)CES Collector-emitter Breakdown lc=--10pA
Voltage (VBE = 0)
for2N2B94
-12
for 2N3209
-20
V(BR)CEO* Collector-emitter Breakdown I0 =- 10mA
Voltage (IB = 0)
for2N2894
for 2N3209
-12
-20
V(BR)EBO Emitrter-base Breakdown
Voltage (lc-0)
IE = -100 pA
~4
VCE (sat)' Collector-emitter Saturation
Voltage
for 2N2894
Ic •- 10 mA IB •- 1 mA
Ic --30 mA IB =- 3mA
I c - - 100mA IB =- 10mA
for 2N3209
l c = - 1 0 m A le — 1mA
Ic --30 mA IB =- 3 mA
Ic-- 100mA la =- 10mA
VBE (sat)" Base-emitter Saturation
Voltage
lc -- 10mA IB=- 1 mA -0.78
Ic --30 mA IB =-3mA -0.85
l c = - 100mA IB --10mA
HFE* DC Current Gain
lc=-10mA VCS=-0.3V
for 2N2894
30
for 2N3209
25
lc=-30mA VCE- -0.5V
for 2N2894
40
for 2M3209
30
lo — 100mA V C E - - I V
for2N2894
25
for2N3209
15
l c = - 3 0 m A VCE =- 0.5V
TBmb = - 55 °C
for 2N2894
17
for2N3209
12
(T
Transition Frequency
lo=--30mA
f = 100 MHz
VCE =- 10V
CE
UV
400
Ceao Emitler-base Capacitance
!°="l°MH2
VEB»-0.5V
Pulsed: pulse duration = 300 us, duly cycle a 1 %.
Max.
-10
-80
-80
-10
-0.15
-0.2
-0.5
-0.15
-0.2
-0.6
-0.98
-1.2
-1.7
150
120
6
Unit
pA
nA
nA
HA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MHz
PF
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