2N2894 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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2N2894

HIGH-SPEED SATURATED SWITCHES

New Jersey Semiconductor 

20 STERN AVE.

SPRINQRELD, NEW JERSEY 07081

U.SA

2N2894

2N3209

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

HIGH-SPEED SATURATED SWITCHES

DESCRIPTION

The 2N2894, and 2N3209 are silicon planar epi-

taxial PNP transistors in Jedec TO-18 metal case,

intended for high speed, low saturation switching

applications up to 100 mA.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Vcao

VCES

VCEO

VEBO

Ic

Plot

Tstg, Tj_

Collector-base Voltage (IE = 0)

Collector-emitter Voltage (VBE = 0)

Collector-emitter Voltage (IB = 0)

Emitter-base Voltage (Ic =0)

Collector Current

Total Power Dissipation at T8mb s 25 °C

at Tcaae <, 25 "C

Storage and Junction Temperature

PNP

3- fiBM

Value

2N2894

2N3209

-12

-20

-12

-20

-12

-20

-4

- 200

0.36

1.2

- 65 to 200

Unit

V

V

V

V

mA

w

w

"C

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ

Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages

customers to verity that datasheets are current before placing orders.

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