BSM 151 F
Characteristics at Tj = 25 ËšC, unless otherwise specified.
Power dissipation Ptot = f (TC)
parameter: Tj = 150 ËšC
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs pulse test
Safe operating area ID = f (VDS)
parameter: single pulse, TC = 25 ËšC,
Tj ≤ 150 ˚C (VDS)
Typ. transfer characteristic ID = f (VGS)
parameter: tp = 80 µs , VDS = 25 V
Semiconductor Group
53