2SC2712 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SC2712

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2712

DESCRIPTION

·With SOT-23 packaging

·High collector-base voltage

·High power dissipation

·Low saturation voltage

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

0.15

A

0.15

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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