2SC2660 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC2660 Datasheet PDF : 2 Pages
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tSE.mi.-dondu.ctoi LP
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2660
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEO= 150V(Min)
• Large Collector Power Dissipation
• Complement to Type 2SA1133
<!'
3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
APPLICATIONS
• Designed for power amplifier and TV vertical deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
2
A
3
A
PC
Collector Power Dissipation
30
W
Tj
Junction Temperature
Tstg
Storage Temperature Range
150
"C
-55-150
r
- BH
-• v H F
*0U Mi'
Ui
^
{
Af
^j *S
I' 5-
1 .1 1- "w L
K
T
V .1 D
H c' h
I
c~l
1
i
••U j
» Rr
mm
DIM WIN MAX
A 15,50 15.90
B 9.90 10,20
C 4.20 4.50
D 0.70 0.90
F 3.40 3,70
G 4.98 5.18
H 2.68
2.90
J 0.44 0.60
K 13.00 13.40
L 1.20 1.4S
Q 2.70 2.90
R 2.30 2.70
S 1.29 1.35
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout
notice. Information furnished by N.I Scmi-Conduetors is believed to he hoih accurate and reliable at the time ofgoint;
in press I limewr. N.I Semi-Conductors assumes no responsibility lor anv errors or omissions discovered in its use.
N.I Scmi-Conduclors eiicuuraiics- customers to verily that datasheets are current before placing orders.
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