2SC2131 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC2131 Datasheet PDF : 1 Pages
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^s.mi-Conau.cto'L ^Pioaueti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
OUTLINE DRAWING
«!9-39
Dimensions ,n mm
NPN EPITAXIAL PLANAR TYPE
DESCRIPTION
2SC2131 is a silicon NPN epitaxial planar type transistor designed
for RF power amplifiers in UHF band mobile radio applications.
FEATURES
• High power gain: Gpe^6.7dB
@VCC = 13.5V, P0 = 1.4W,f = 500MHz
• TO-39 metal seeled package for high reliability.
• Emitter ballasted construction, gold metallization for good
performances.
• Emitter electrode is connected electrically to the case.
APPLICATION
1 watt power amplifiers in UHF band mobile radio applications
and driver amplifiers in general.
PIN :
(T) EMITTER ( C A S E )
® BASE
3) COLLECTOR
ABSOLUTE MAXIMUM RATINGS
unless otherwise s
Symbol
VCBO
VLBO
VCEO
ic
Parameter
Collector to base voitage
Emitter to base voltage
Collector to emitter voltage
Collector current
•
TI
Junct on temperature
Tstg
Storage temperature
Rth-a
Rth-c
Mole Above parameturs are guaranteed independently.
Conditions
RBE=oo
Ta=25'C
TC=J5'C
Junction to amtien;
Junction to case
Ratings
40
.1
18
06
C.8
4
175
-55 to 175
187.5
37.5
Unit
V
V
V
A
w
w
•c
•c
•c/w
'c/w
ELECTRICAL CHARACTERISTICS (
unless other*™s
Symbol
Parameter
Test cond'tions
V(BR)Eao ' Emitter to base breakdown voltage
|E = )mA. lc =0
V(BH'CBO
V(BR;CEO
Collector to base breakdown voltage
Collector to emitter breakdown voltage
lc =5rnA, 1^ — 0
(c = 50mA, RBE = °°
'cao
Col'ector cutoff current
VcB =2 5 V , IE=0
UBO
Emitter cutoff current
V£B=3 V , l c = Q
1FE
DC forward Current gain*
V c e ' l O V , I0= 0.1A
• Po
Output power
''c
Collector effic'ency
Note. * Pulse test, Pw=15CVs diity=5%
Above parameters, ratings, limits and conditions are subject to cnange
Um,.S
Mm
Typ
4
40
18
ID
50
1.4
1 .6
SO
60
Ma.
100
100
180
Una
V
V
V
uA
/a A
W
%
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However.NJ Semi-Conduetors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verity that datasheets are current before placing orders.
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