UTC2SD1898 Ver la hoja de datos (PDF) - Unisonic Technologies
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UTC2SD1898 Datasheet PDF : 3 Pages
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UTC2SD1898 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVES
1000
Figure 1.Grounded Emitter
Propagation Characteristics
V CE = 5V
Ta=25 ℃
100
10
Figure 2.Grounded Emitter
Output Characteristics
Ta=25 ℃
1.0
6mA
5mA
4mA
0.8
3mA
0.6
2mA
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Base to Emitter Voltage:V BE (V)
Figure 3.DC Current Gain
vs.Collector Current
Ta= 25 ℃
0.4
1mA
0.2
IB =0mA
0
0
2
4
6
8 10
Collector to Emitter Voltage:V CE (V)
Figure 4.Collector-emitter Saturation
Voltage vs.Collector Current
Ta=25 ℃
1000
100
V CE = 3V
V CE = 1V
0
0
10
100
Collector Current : Ic(mA)
Figure 5. Gain Bandwidth Product
vs.Emitter Current
1000
Ta=25 ℃
500
V CE = 5V
200
100
2.0
1.0
0.5
0.2
0.1
Ic/I B= 20/1
0.05
0.02
0.01
0
Ic/IB=10/1
10
100
1000
Collector Current : Ic(mA)
Figure 6.CollectorOutput Capacitance
1000
vs.Collector-Base Voltage
Ta=25 ℃
f=1MHz
I E=0A
I c=0A
100
50
20
10
10
5
2
1 2 5 10 20 50 100200 5001000
Emitter Current: -I E (mA)
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Emitter To Base Voltage :V CB (V)
Collector To Base Voltage :V CB (V)
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R208-030,A
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