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2SD1898

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SD1898 TRANSISTOR (NPN)

FEATURES

z High Breakdown Voltage and Current

z Excellent DC Current Gain Linearity

z Complement the 2SB1260

z Low Collector-Emitter Saturation Voltage

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

100

80

5

1

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

Min Typ

V(BR)CBO IC=50µA,IE=0

100

V(BR)CEO IC=1mA,IB=0

80

V(BR)EBO IE=50µA,IC=0

5

ICBO

VCB=80V,IE=0

IEBO

VEB=4V,IC=0

hFE

VCE=3V, IC=500mA

82

VCE(sat) IC=500mA,IB=20mA

fT

VCE=10V,IC=50mA, f=100MHz

100

Cob

VCB=10V, IE=0, f=1MHz

20

Max

1

1

390

0.4

CLASSIFICATION OF hFE

RANK

RANGE

MARKING

P

82–180

Q

120–270

DF

R

180–390

Unit

V

V

V

µA

µA

V

MHz

pF

www.cj-elec.com

1

D,Oct,2015

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