2SD1898 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Número de pieza

componentes Descripción

Fabricante

2SD1898

TRANSISTOR (NPN)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SD1898

2SD1898 TRANSISTOR (NPN)

SOT-89

FEATURES

z High VCEO

z High IC

z Good hFE linearity

z Low VCE (sat)

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

100

80

5

1

500

150

-55-150

Units

V

V

V

A

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Symbol

Test conditions

V(BR)CBO IC=50μA, IE=0

V(BR)CEO IC=1mA, IB=0

V(BR)EBO IE=50μA, IC=0

ICBO

VCB=80V, IE=0

IEBO

VEB=4V, IC=0

hFE

VCE=3V, IC=0.5A

VCE(sat) IC=500mA, IB=20mA

fT

VCE=10V, IC=50mA, f=100MHz

Cob VCB=10V,IE=0,f=1MHz

MIN TYP MAX UNIT

100

V

80

V

5

V

1

μA

1

μA

82

390

0.4

V

100

MHz

20

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

P

82-180

Q

120-270

DF

R

180-390

WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:wej@yongerjia.com

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