BFR92 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
BFR92 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 95 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
260 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
fT
Cc
Ce
Cre
GUM
F
Vo
collector cut-off current
IE = 0; VCB = 10 V
DC current gain
IC = 14 mA; VCE = 10 V
transition frequency
IC = 14 mA; VCE = 10 V; f = 500 MHz
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
feedback capacitance
IC = 2 mA; VCE = 10 V; f = 1 MHz;
Tamb = 25 °C
maximum unilateral power gain
(note 1)
IC = 14 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
noise figure (see Fig.2 and note 2) IC = 2 mA; VCE = 10 V; f = 500 MHz;
Tamb = 25 °C; Zs = opt.
output voltage
note 3
MIN. TYP. MAX. UNIT
−
−
50 nA
40 90 −
−
5
−
GHz
−
0.75 −
pF
−
0.8 −
pF
−
0.4 −
pF
−
18 −
dB
−
2.4 −
dB
−
150 −
mV
Notes
1. GUM is the maximum unilateral power gain, assuming
2. Crystal mounted in a SOT37 envelope (BFR90).
S12 is
zero and
GUM
=
10
log----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB˙
3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 495.25 MHz;
Vq = Vo −6 dB; fq = 503.25 MHz;
Vr = Vo −6 dB; fr = 505.25 MHz;
measured at f(p+q−r) = 493.25 MHz.
September 1995
3
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