2SH26 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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componentes Descripción

Fabricante

2SH26

Silicon N Channel IGBT High Speed Power Switching

Hitachi -> Renesas Electronics 

2SH26

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to Emitter voltage

Gate to Emitter voltage

Collector current

Collector peak current

Collector dissipation

Channel temperature

Storage temperature

Note: 1. Value at Tc = 25°C

Symbol

VCES

VGES

IC

ic(peak)

P Note1

C

Tj

Tstg

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Zero gate voltage collector ICES

current

—

—

Gate to emitter leak current IGES

Gate to emitter cutoff voltage VGE(off)

Collector to emitter saturation VCE(sat)

voltage

—

—

6.0

—

—

2.1

Input capacitance

Cies

—

620

Switching time

tr

—

140

t on

—

215

tf

—

300

t off

—

380

Ratings

600

±20

10

20

50

150

–55 to +150

Max Unit

100

µA

±1

µA

8.0

V

2.6

V

—

pF

—

ns

—

ns

600

ns

760

ns

Unit

V

V

A

A

W

°C

°C

Test Conditions

VCE = 600V, VGE = 0

VGE = ± 20 V, VCE = 0

IC = 10mA, VCE = 10V

IC = 10A, VGE = 15V

VCE = 10V, VGE = 0

f = 1MHz

IC = 10A

RL = 30 Ω

VGS = ±15V

Rg = 50 Ω

2

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