2SC3211 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3211 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A;L= 25rnH
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VsEfeat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
lc= 3A; IB= 0.6A
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
IC=0.1A;VCE=5V
hFE-2
DC Current Gain
lc= 3A; VCE= 5V
fi
Current-Gain—Bandwidth Product lc= 0.5A; Vce= 10V
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC=3A;IB1=-IB2=0.6A;
Vcc= 200V
2SC3211
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
3
MHz
1.0 u s
3.0 u s
1.0
us
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