2SC3211 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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Fabricante
2SC3211 Datasheet PDF : 2 Pages
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, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3211
DESCRIPTION
• Collector-Emiiter Sustaining Voltage-
: VCEo(sus)= 500V(Min.)
• Low Collector Saturation Voltage
: VcE(Mt)=1.0V(Max.)@lc=3A
• High Speed Switching
2
H&
1-
1 13
PIN 1. BASE
^2. COLLECTOR
3 -EMITTER
TC-JPFs package
APPLICATIONS
• Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
Veeo
Emitter-Base Voltage
8
V
-4- B - -» C^...^
^T-T , ~s"*—
"." >F . .
V-- , ^ r 1 u : '
t"
A
IJ-; r
* >i..ts. *- -*-L, i
i
t
4
K
-*-«-D
1^
T
*-N-^
_,». .»^ . -^•--RJ
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25'C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
10
A
3
A
3
W
70
150
r
-55-150 °c
•-• >. i.
DIM
A
B
C
D
F
H
J
K
L
N
0
R
S
T
U
mm
MIN MAX
20.70 21.30
14.70 15.30
4.SO 5.20
0.90 1.10
3.20 3.40
3.70 4.30
0.50 0.70
16.40 17,00
1.90 2,10
10.30 11.00
5.60 8.00
1.30 2.20
3.10 3.50
8.70 9,30
0.5S 0.7S
N.I Scnii-Coiiductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time ol'going
to press. ll(iwe\cr. N.I Scmi-Coiuluclors assumes MO responsibility for anv errors or omissions discovered in its use.
N.I Scmi-( (inductors encuurai'es customers to verily that datasheets ;ire ciinvnl bel'ore placing orders.
Quality Semi-Conductors
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