2SB825 Ver la hoja de datos (PDF) - Wing Shing International Group

Número de pieza

componentes Descripción

Fabricante

2SB825

PNP EPITAXIAL SILICON TRANSISTOR

Wing Shing International Group 

2SB825

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

TO-220

ABSOLUTE MAXIMUM RATINGS (TA=25℃)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Rating

-50

-60

-5

-7

40

150

-50~150

Unit

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (TA=25℃)

Characteristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

Symbol

ICBO

IEBO

hFE1

VCE(sat)

fT

Test Condition

Min Typ

VCB= -50V , IE=0

VEB= -5V , IC=0

VCE= -2V , IC=-1.0A 100

IC=-4A , IB=-0.4A

VCE= -2V , IC=-0.5A

8

Max

-10

10

-0.4

Unit

µA

µA

V

MHZ

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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