2SB1341 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1341 Datasheet PDF : 2 Pages
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, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1341
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -SOV(Min)
• High DC Current Gain-
: hFE- 1000(Min)@ (VCE= -3V, lc= -2A)
APPLICATIONS
• Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25 C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
-6
A
2
W
35
150
r:
Tstg
Storage Temperature
-55-150 "C
•2
•p^^
5 | • \:
T-v•
"r
/rT7
1 Base
2 Collector
3 Emitter
TO-2!?OC package
"" B *1
T
— U 1
A
-fr - s
~1
or. » f
' H ]1
K
•T »! c
i
c
1
i
••r-1 J
-
mm
DIM MM MAX
A 15.50 15.90
B 9.90 10,20
c 4.20 4.50
D 0.70 0.90
F 3.40 j.70
£ 4.98 5.18
H 2.68 2.90
v
0.44 0.60
K 13.00 13.40
L 1.10 1.45
0 2.70 2.90
R 2.30 2.70
S 1.29 1.35
_; (>.45 6,f>5
u ffM 8.86
N.I Seini-Ciimluctors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going
lo press. I hmever. N.I Semi-Conductors assumes no responsibility I'or an> errors or omissions discovered in its use.
N.I Semi-Conductors ciicour.-i.ucs customersto verily that datasheets are current before placing orders.
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