2SB1257 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1257 Datasheet PDF : 2 Pages
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Jsiasu ^£,mi-Condu.ctoi t-Pioaucta, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Darlington Power Transistor
2SB1257
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V,BR)CEo= -60V(Min)
• High DC Current Gain-
: hFt= 2000(Min)@lc= -3A
• Complement to Type 2SD2014
APPLICATIONS
• Driver for solenoid, relay and motor and general purpose
applications.
PIM:1 Base
2 Collector
3 Emitter
TO-3FH.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCEO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VtHO
Emitter-Base Voltage
-6
V
Ic ' Collector Current-Continuous
Icn
Collector Current-Pulse
-4
A
-6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
T.,
Junction Temperature
-1
A
25
W
150
C
T5lg
Storage Temperature Range
-55-150
T
Qualify Semi-Conductors
,'T,.T•nifrriri \if?
mm
L'lM WIN MAX
A 19,90 20.10
6 15.7.5 16.10
\_ 5.50 5.70
D 0.90 1.10
F 3.30 3,50
G 2,30 3.20
h 5.90 6.10
0.595 0.70
K 21.10 22,50
L 1.90 2.3S
N TlMi 11,00
0 4.90 5.10
R 3,75 3,95
S 3. 20 3.40
I : 9,90 10,10
¥ i.JO 490
2. 1.9G | 2.10
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