2SA1588(2003) Ver la hoja de datos (PDF) - Toshiba
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2SA1588 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1588
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
· Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
· Complementary to 2SC4118
2SA1588
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
-35
V
-30
V
-5
V
-500
mA
-50
mA
100
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = -35 V, IE = 0
VEB = -5 V, IC = 0
VCE = -1 V, IC = -100 mA
VCE = -6 V, IC = -400 mA
IC = -100 mA, IB = -10 mA
VCE = -1 V, IC = -100 mA
VCE = -6 V, IC = -20 mA
VCB = -6 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240
hFE (2) classification O: 25 (min), Y: 40 (min)
Marking
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Min Typ. Max Unit
¾
¾ -0.1 mA
¾
¾ -0.1 mA
70
¾
240
25
¾
¾
¾ -0.1 -0.25 V
¾ -0.8 -1.0
V
¾
200
¾
MHz
¾
13
¾
pF
1
2003-03-27
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