2SA1201 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

2SA1201

Silicon PNP transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA1201

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current-Continuous

Collector Base-Continuous

Collector Power Dissipation

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range

*mounted on ceramic substrate(250mm2×0.8t)

*贴装于 250mm2×0.8t 的陶瓷板上。



符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

*PC

Tj

Tstg

电性能参数 / Electrical Characteristics(Ta=25℃)

数值

Rating

-120

-120

-5.0

-800

-160

500

1.0

150

-55～150

单位

Unit

V

V

V

mA

mA

mW

W

℃

℃

参数

Parameter

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCEO IC=-10mA IB=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-120

V

Emitter to Base Breakdown Voltage VEBO IC=-1.0mA IC=0

-5.0

V

Collector Cut-Off Current

ICBO VCB=-120V IE=0

-0.1 μA

Emitter Base Cut-Off Current

IEBO VEB=-5.0V IC=0

-0.1 μA

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE VCE=-5.0V IC=-100mA 80

VCE(sat) IC=-500mA IB=-50mA

240

-1.0 V

Collector to Base Voltage

VBE VCE=-5.0V IC=-500mA

-1.0 V

Transition Frequency

Collector Output Capacitance

fT VCE=-5.0V IC=-100mA

Cob

VCB=-10V

f=1.0MHz

IE=0

120

MHz

30 pF

http://www.fsbrec.com

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