2SA1011 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SA1011 Datasheet PDF : 2 Pages
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(Ls.iis.ii
Cx
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
roduati, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1011
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(satr -0.5V(Typ.)@ lc= -0.5A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-160V(Min.)
• Complement to Type 2SC2344
PIN 1.BASE
I.COLLECTOR
3. EMITTER
TO-220C package
APPLICATIONS
• Designed for high-voltage switching, audio frequency power
amplifiers, 100W output predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-160
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-1.5
A
I CM
Collector Current-Peak
PC
Total Power Dissipation® TC=25"C
-3.0
A
25
W
Tj
Junction Temperature
150
'C
Tstg
Storage Temperature Range
-55-150 "C
"« B M
:kyy 1 •* V H |
MQ
U1
t
A
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I *-
T * H
f
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K
T
f H ^ e h '
••H J
• Rh
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i
—1
mm
D!M MIN MAX
A 15.50 15.90
B 9.90 10.20
r 4.20 4.50
D 0.70 0.90
F 3.40 3.70
G 4.98 5.18
H 2.68 2.90
•j 0.44 0.60
K 13.00 13.40
L 1.20 1.45
U 2.70 2.90
R 2.30 2.70
S 1.29 1.35
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductorsreserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of gaooiiing
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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