A1060 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

A1060

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA ; IB= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A

VBE(OI) Base-Emitter On Voltage

lc= -3A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -3V; lc= 0

hpE.1 DC Current Gain

lc= -0.02A ; VCE= -5V

hpE-2

DC Current Gain

lc=-1A;VCE=-5V

hpE-3

DC Current Gain

fl

Current-Gain—Bandwidth Product

lc= -3A; VCE= -5V

IG= -0.5A; VCE= -5V

hpE-2 Classifications

R

Q

P

40-80 60-120 100-200

2SA1060

MIN TYP. MAX UNIT

-80

V

-2.0

V

-1.8

V

-50 u A

-50 M A

20

40

200

20

20

MHz

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