A1060 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Fabricante

A1060

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA1060

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min)

• High Power Dissipation

• Complement to Type 2SC2484

APPLICATIONS

• Designed for high power audio frequency amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-80

V

VCEO Collector-Emitter Voltage

-80

V

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@ TC=25"C

Tj

Junction Temperature

-8

A

60

W

150

"C

Tstg

Storage Temperature Range

-55-150

"C

a -x

.•V '.

123

PIN: l.Base

^Collector

3. Emitter

TC-3PN Package

-*— B—- -C---

m.,- 4

y^ F ^ - S

*UQil/-- ^Y

'' '

A• +T!'E'

It

K

I

T

G *~*-L

.--.p

n ^-N-^

mm

DIM WIN MAX

A is.eo 20.30

B 15,50 15.70

C 4.70 4.90

D 0.90 1.10

E 1.90 2,10

F 3.40 3,60

Q 2,90 3,20

H 3.20 3.40

j 0,595 0.605

K 19.30 20.70

L 1.90 2,20

N 10.89 10,91

Q 4,90 5.10

R 3.35 3.45

S 1.995 2.100

U 5.90 6.20

y 9.90 10.10

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However. N.I Semi-Conduetors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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