2SB985 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

2SB985

Silicon PNP transistor in a TO-92LM Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB985

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current(Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

Tj

Tstg

DATA SHEET

数值

Rating

-60

-50

-6.0

-3.0

-6.0

1.0

150

-55～150

单位

Unit

V

V

V

A

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-10μA IE=0

VCEO IC=-1.0mA IB=0

VEBO IE=-10μA IC=0

Collector Cut-Off Current

ICBO VCB=-40V IE=0

Emitter Cut-Off Current

IEBO VEB=-4.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE(1)

hFE(2)

VCE=-2.0V

VCE=-2.0V

VCE(sat) IC=-2.0A

IC=-100mA

IC=-3.0A

IB=-100mA

Base to Emitter Saturation Voltage VBE(sat) IC=-2.0A IB=-100mA

Transition Frequency

fT VCE=-10V IC=-50mA

Collector output capacitance

Cob VCB=-10V f=1.0MHz

最小值 典型值 最大值 单位

Min Typ Max Unit

-60

V

-50

V

-6.0

V

-1.0 μA

-1.0 μA

100

560

40

-0.35 -0.7 V

-0.94 -1.2 V

150

MHz

39

pF

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