2SA744 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SA744 Datasheet PDF : 2 Pages
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r _/£7i£(j ^ztni-L.onau.cto'i L/^ioaucti, Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA744
DESCRIPTION
• High Power Dissipation-
: PO 70W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -80V(Min.)
• Complement to Type 2SC1402
APPLICATIONS
• Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
-3
A
70
W
150
r
-65-150
-c
PIN 1-BASE
2. a/IITTER
3. COLLECT OR (CASE)
TO-3 package
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t
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111 n
DIM MM MAX
A
33 00
e 25.30 26.6?"
(
7.80 8,50
D
O.SC t 10
E
1.40 1 60
Q
10 92
H
5 46
K U.iO 1350
L 1675 1705
N 1940 19.62
g
400 420
u 30.00 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy N.I Semi-Conductors is believed to he hoth accurate and reliable at (he time ofgoing
to press. I kmever, N.I Semi-Conductors assumes no responsibility for am errors or omissionsdiscovered in its use."
NJ Semi-Condiieiors encourages customers (o verify that datasheets are current before placing orders.
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