2SA765 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SA765 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA765
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -SOV(Min)
• Low Collector Saturation Voltage-
:VCE(sat)=1.5V(Max.)@lc=4A
• Complement to Type 2SC1445
APPLICATIONS
• Designed for general purpose power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
Total Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
-6
A
40
W
150
°c
Tstg
Storage Temperature Range
-55-150 "C
PIN BASE
2. BETTER
3, COLLECTOR (CASE)
TO-66 package
1
'
HUM
MM WIN MAX
A 31,40 31.80
B 17.30 17.70
f
6.70 7.10
D 0.70 0.90
E 1.40 1.60
G
5.08
H
2.54
K 9.80 10.20
L 14.70 14.90
H 12.40 12.60
ij
3.60 3.80
Ij 24.30 24.SO
V J.SO 3.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information fumished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of aoing
to press. I kmever, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use."
N.I Seiiii-Condiietors encourages customers to verify that datasheets are current before placina orders.
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