2SA766 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SA766

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SA766

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CER Collector-Emitter Breakdown Voltage lc= -0.2A; L= 25mH, RBE= 5kO

-150

V

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-1mA; lc=0

-5

V

Vce(sat) Collector-Emitter Saturation Voltage IC=-1A; IB=-0.1A

-1.0 V

VsE(on)-1 Base-Emitter On Voltage

lc=-0.1A;VCE=-5V

-0.8 V

VeE(on)-2 Base-Emitter On Voltage

lc= -0.5A; VGE= -5V

-1.0

V

ICBO

Collector Cutoff Current

VCB= -60V; le= 0

-30 u A

hpE-1 DC Current Gain

lc=-0.1A;VCE=-5V

35

150

hFE-2

DC Current Gain

lc= -0.5A; VCE= -5V

35

ft

Current-Gain—Bandwidth Product

IE=0.1A;V0B=-10V

15

MHz

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