2SA766 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SA766 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA766
DESCRIPTION
• Collector-Base Breakdown Voltage-
:V(BR)CBO=-150V(Min)
• High Collector Power Dissipation-
• Complement to Type 2SC1450
APPLICATIONS
• Line-operated vertical deflection output
• Medium power amplifier
PIN t.BASE
2. BETTER
-J COLLECT OR (CASE)
TO-66 package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-150
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-0.4
A
ICM
Collector Current-Peak
Total Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-1.2
A
20
W
150
"C
-65-150 °c
•••
t
l~
g i C 1 c
PL _ •JU-D f LK
u —»
*-£V-
i"^N, / |
t
S"~^ G B
X
I
nun
MM urn MAX
A 31.40 31.80
e 17.30 17.70
t."
6.70 7.10
D 0.70 0.90
£ 1.40 1.60
;}
5.08
h
2.54
H 9.80 10.20
I 14.70 14.90
N 12.40 12.60
0 3.60 3^0
U 24.30 24.50
V 3.50 3.70
M Sem.-tonductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information turnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time
to press. I kmover. NJ Semi-Cotiiluctors assumes no responsibility Cor any errors or omissionsdiscovered in its use
VI Semi-conductors encourages customers to verify that datasheet are current before placing orders
Quality Semi-Conductors
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