2SA812 Ver la hoja de datos (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Número de pieza

componentes Descripción

Fabricante

2SA812

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

Complementary to 2SC1623

High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)

High Voltage: Vceo=-50V

2SA812(PNP)

MAXIMUM RATINGS (TA=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

-60

VCEO

-50

VEBO

-5

IC

-100

PC

200

TJ

150

Tstg

-55 to +150

Unit

V

V

V

mA

mW

1. BASE

2. EMITTER

3. COLLECTO

SOT-23

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Collector-base breakdown voltage

VCBO IC=-100μA, IE=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

VCEO

VEBO

IC= -1mA, IB=0

IE= -100μA, IC=0

Collector cut-off current

ICBO

VCB=- 60 V, IE=0

Emitter cut-off current

IEBO

VEB= -5V, IC=0

DC current gain

hFE

VCE=- 6V, IC= -1mA

Collector-emitter saturation voltage

VCE(sat) IC=-100mA, IB= -10mA

Base-emitter voltage

Transition frequency

VBE

IC=-1mA, VCE=-6V

fT

VCE=-6V, IC= -10mA

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Min

-60

-50

-5

90

-0.58

CLASSIFICATION OF hFE

Marking

M4

Range

90-180

M5

135-270

M6

200-400

Typ Max Unit

V

V

V

-0.1 μA

-0.1 μA

600

-0.3

V

-0.68 V

180

MHz

4.5

pF

M7

300-600

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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