2SA1166 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Fabricante

2SA1166

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

\Jtoaucti, Una.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA1166

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

V(BR)CEO=-150V(Min)

• Good Linearity of hFE

• High Power Dissipation

1 23

PIN 1.BASE

2.COLLECTOR

3-EMITTER

MT-200 package

APPLICATIONS

• Power amplifier applications

• Recommended for 100W high-fidelity audio frequency

amplifier output stage

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

Collector Power Dissipation

PC

@ Tc=25'C

Tj

Junction Temperature

-15

A

150

W

150

r

Tstg

Storage Temperature Range

-55-150 "C

mm

DIM MIN

A 21.00

B 35-80

C 5-60

D 1.04

F 3.10

Q 1.90

H 3.60

J 0.55

K 20,00

L 2.90

N 10.50

Q 24.00

R 2..90

S 2.00

U 6.90

Y 890

MAX

21.70

36-70

6-20

1.07

3.50

2.40

4.00

0.85

20. SO

3.40

11.10

24.50

3.30

2.20

7.10

9.10

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished hy N.I Semi-Conduetors is relieved to he both accurate and reliable at the time of going

lo press. However. NJ Semi-Conduetors assumes no responsibility for any errors or omissionsdiscovered in its use. "

N.I Semi-Conductors encourages customers to verify that datasheets are current before placins orders.

Quality Semi-Conductors

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