2SD1168 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

2SD1168

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1168

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCER(SUS) Collector-emitter sustaining voltage IC=5A; RBE=10Ω;L=2mH

V(BR)EBO Emitter-base breakdown votage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A

VBEsat Base-emitter saturation voltage

IC=2 A;IB=1A

ICBO

Collector cut-off current

VCB=750V; IE=0

VCB=1500V; IE=0

hFE

DC current gain

IC=1A ; VCE=4V

tf

Fall time

ts

Storage time

IC=1.5 A; IB1=0.2A; IB2=-0.7A

MIN TYP. MAX UNIT

800

V

5

V

1.0

V

1.5

V

0.1

mA

1.0

9

25

0.5

μs

2

μs

‹ hFE Classifications

Q

P

9-18

15-25

2

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