2SC1342 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC1342

Silicon NPN Epitaxial Planar

Hitachi -> Renesas Electronics 

2SC1342

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

30

V

20

V

4

V

30

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 30

—

voltage

Collector to emitter breakdown V(BR)CEO 20

—

voltage

Emitter to base breakdown

V(BR)EBO

4

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE*1

35

—

Collector to emitter saturation VCE(sat)

—

0.8

voltage

Collector output capacitance Cob

—

1.1

Base time constant

rbb’ •CC

—

20

Gain bandwidth product

Noise figure

fT

150 320

NF

—

5.5

Reverse transfer capacitance Cre

—

0.9

Power gain

PG

13

17

Note: 1. The 2SC1342 is grouped by hFE as follows.

A

B

C

35 to 70

60 to 120 100 to 200

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

0.5 µA

200

1.2 V

VCB = 10 V, IE = 0

VCE = 6 V, IC = 1 mA

IC = 10 mA, IB = 1 mA

1.5 pF

35

ps

VCB = 10 V, IE = 0, f = 1 MHz

VCB = 6 V, IC = 1 mA,

f = 31.8 MHz

—

MHz VCE = 6 V, IC = 1 mA

8.5 dB

VCE = 6 V, IC = 1 mA,

f = 100 MHz, Rg = 50 Ω

1.2 pF

VCE = 10 V, IE = –1 mA,

f = 1 MHz

—

dB

VCE = 6 V, IC = 1 mA,

f = 100 MHz, Rg = 100 Ω,

RL = 550 Ω, Unneutralized

2

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