FMMT494TA(2017) Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

FMMT494TA
(Rev.:2017)

120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Diodes Incorporated. 

FMMT494

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Base Current

Symbol

VCBO

VCEO

VEBO

IC

ICM

IB

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Lead (Note 6)

Operating and Storage Temperature Range

Symbol

PD

RθJA

RθJL

TJ, TSTG

Value

140

120

7

1

2

200

Value

500

250

197

-55 to +150

Unit

V

V

V

A

A

mA

Unit

mW

°C/W

°C/W

°C

ESD Ratings (Note 7)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

4,000

≥ 400

Unit JEDEC Class

V

3A

V

C

Notes:

5. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

FMMT494

Document number: DS33095 Rev. 5 - 2

2 of 7

www.diodes.com

November 2017

© Diodes Incorporated

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