BCW70 Ver la hoja de datos (PDF) - Yea Shin Technology Co., Ltd

Número de pieza

componentes Descripción

Fabricante

BCW70

General Purpose Transistors

Yea Shin Technology Co., Ltd 

DEVICE CHARACTERISTICS

BCW70

104

103

102

101

100

10–1

10–2

–4

V = 30 V

CC

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the

I CEO

model as shown in Figure 16. Using the model and the device

thermal response the normalized effective transient thermal resis-

I

CBO

AND

I CEX @ V BE(off) = 3.0 V

tance of Figure 14 was calculated for various duty cycles.

To find Z θJA(t) , multiply the value obtained from Figure 14 by the

steady state value R θJA .

Example:

Dissipating 2.0 watts peak under the following conditions:

t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)

Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading

of r(t) is 0.22.

–2

0 +20 +40 +60 +80 +100 +120 +140 +160

The peak rise in junction temperature is therefore

T J , JUNCTION TEMPERATURE (°C)

Figure 15. Typical Collector Leakage Current

∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see AN–569.

http://www.yeashin.com

6

REV.02 20120403

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