BCW70 Ver la hoja de datos (PDF) - Yea Shin Technology Co., Ltd

Número de pieza

componentes Descripción

Fabricante

BCW70

General Purpose Transistors

Yea Shin Technology Co., Ltd 

DEVICE CHARACTERISTICS

BCW70

TYPICAL NOISE CHARACTERISTICS

(V = – 5.0 Vdc, T = 25°C)

CE

A

10

7.0

5.0

3.0

2.0 1.0mA

IC=10 µA

BANDWIDTH = 1.0 Hz

R S~ ~ 0

30µA

100µA

300µA

1.0

10

20

50 100 200 500 1.0k 2.0k

f, FREQUENCY (Hz)

Figure 1. Noise Voltage

5.0k 10k

10.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

10 20

IC=1.0mA

BANDWIDTH = 1.0 Hz

R S ~ ~

300µA

100µA

30µA

10µA

50 100 200 500 1.0k 2.0k 5.0k 10k

f, FREQUENCY (Hz)

Figure 2. Noise Current

NOISE FIGURE CONTOURS

(V = – 5.0 Vdc, T = 25°C)

CE

A

1.0M

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

10

BANDWIDTH = 1.0 Hz

0.5 dB

1.0 dB

2.0dB

3.0 dB

5.0 dB

20 30 50 70 100

200 300 500 700 1.0K

I C , COLLECTOR CURRENT (µA)

Figure 3. Narrow Band, 100 Hz

1.0M

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

10

BANDWIDTH = 1.0 Hz

0.5 dB

1.0dB

2.0 dB

3.0 dB

5.0 dB

20 30 50 70 100

200 300 500 700 1.0K

I C , COLLECTOR CURRENT (µA)

Figure 4. Narrow Band, 1.0 kHz

1.0M

500k

10 Hz to 15.7KHz

200k

100k

50k

20k

10k

0.5dB

5.0k

2.0k

1.0dB

1.0k

500

200

100

10

20 30 50 70 100

2.0dB

3.0 dB

5.0 dB

200 300 500 700 1.0K

I C , COLLECTOR CURRENT (µA)

Figure 5. Wideband

http://www.yeashin.com

3

Noise Figure is Defined as:

( –––––––––––––––) e

n

2

+

4KTRS

+

I

2

n

R

2

S

1/ 2

NF = 20 log 10

4KTR S

e = Noise Voltage of the Transistor referred to the input. (Figure 3)

n

I n = Noise Current of the Transistor referred to the input. (Figure 4)

K = Boltzman’s Constant (1.38 x 10 –23 j/°K)

T = Temperature of the Source Resistance (°K)

R s = Source Resistance ( Ω )

REV.02 20120403

Share Link: