MXP1126-C Ver la hoja de datos (PDF) - Microsemi Corporation
Número de pieza
componentes Descripción
Fabricante
MXP1126-C Datasheet PDF : 1 Pages
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
Photo Transistor Chip
Features
• Light Activated Photo Transistor Chip
• Planar NPN
• Aluminum Wire bondable
• Backside Metallization - Gold
• Die Attach methods: Eutectic or Epoxy
Electrical Characteristics @ 25oC
SYMBOL
CHARACTERISTIC
BVCEO
BVEBO
BVCBO
ID
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector Current
hFE
Beta
CONDITIONS
IC = 100 µA
IE = 100 µA
IC = 100 µA
V
CE
=
10
Volts
VCE = 5 Volts, IC = 1 mA
MXP1126-C
MIN
TYP
MAX
UNITS
500
Volts
20
Volts
500
Volts
30
nAmps
25
Data Sheet # MSC1341.PDF
Updated:October 1998
Opto Products
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