BF660 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BF660

PNP Silicon RF Transistor

Infineon Technologies 

BF 660

Total power dissipation Ptot = f (TA)

Transition frequency fT = f (IC)

VCE = 10 V, f = 100 MHz

Collector-base capacitance Ccb = f (VCB)

f = 1 MHz

Semiconductor Group

3

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