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Número de pieza

componentes Descripción

Fabricante

BF660

PNP Silicon RF Transistor

Infineon Technologies 

BF 660

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base breakdown voltage

IC = 10 µA, IE = 0

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 20 V, IE = 0

DC current gain

IC = 3 mA, VCE = 10 V

AC Characteristics

Transition frequency

IC = 5 mA, VCE = 10 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, VBE = 0 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, VBE = 0 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

V(BR) CE0 30

–

V(BR) CB0 40

–

V(BR) EB0 4

–

ICB0

–

–

hFE

30

–

–

V

–

–

50 nA

–

–

fT

–

700 –

MHz

Ccb

–

0.6 –

pF

Cce

–

0.28 –

Semiconductor Group

2

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