BF660 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BF660

PNP Silicon RF Transistor

Infineon Technologies 

PNP Silicon RF Transistor

q For VHF oscillator applications

BF 660

Type

BF 660

Marking

LEs

Ordering Code

(tape and reel)

Q62702-F982

Pin Configuration

1

2

3

B

E

C

Package1)

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Emitter current

Total power dissipation, TA ≤ 25 ˚C

Junction temperature

Storage temperature range

Symbol

VCE0

VCB0

VEB0

IC

IE

Ptot

Tj

Tstg

Values

Unit

30

V

40

4

25

mA

30

280

mW

150

˚C

– 65 … + 150

Thermal Resistance

Junction - ambient2)

Rth JA

≤ 450

K/W

1) For detailed information see chapter Package Outlines.

2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

Semiconductor Group

1

07.94

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