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BFT92

PNP 5 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

PNP 5 GHz wideband transistor

Product specification

BFT92

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

hFE

DC current gain

fT

transition frequency

Cc

collector capacitance

Ce

emitter capacitance

Cre

feedback capacitance

GUM

maximum unilateral power gain

(note 1)

F

noise figure

Vo

output voltage

CONDITIONS

IE = 0; VCB = −10 V;

IC = −14 mA; VCE = −10 V

IC = −14 mA; VCE = −10 V;

f = 500 MHz

IE = ie = 0; VCB = −10 V; f = 1 MHz

IC = ic = 0; VEB = −0.5 V; f = 1 MHz

IC = −2 mA; VCE = −10 V; f = 1 MHz

IC = −14 mA; VCE = −10 V;

f = 500 MHz; Tamb = 25 °C

IC = −5 mA; VCE = −10 V;

f = 500 MHz; Tamb = 25 °C

note 2

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.

2. dim = −60 dB (DIN 45004B); IC = −14 mA; VCE = −10 V; RL = 75 Ω;

Vp = Vo at dim = −60 dB; fp = 495.25 MHz;

Vq = Vo −6 dB; fq = 503.25 MHz;

Vr = Vo −6 dB; fr = 505.25 MHz;

measured at f(p+q-r) = 493.25 MHz.

MIN. TYP. MAX. UNIT

− − −50 nA

20 50 −

−5−

GHz

− 0.75 −

pF

− 0.8 −

pF

− 0.7 −

pF

− 18 −

dB

− 2.5 −

dB

− 150 −

mV

November 1992

4

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